Enhanced Light Extraction of GaN-Based Green Light-Emitting Diodes With GaOOH Rods
作者： Hee Kwan Lee , Myung Sub Kim , Jae Su Yu
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摘要: We reported the enhanced light extraction efficiency in InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with gallium oxide hydroxide (GaOOH) rods. The GaOOH rods were prepared by an aqueous nitrate solution at 80°C and then coated on surface of indium tin electrodes LEDs a simple drop coating process. synthesized indicated rhombus-shaped rod structure average lengths 2 μm lateral dimensions 50-500 nm. For rods, output powers increased 24.3% 26.4% compared to conventional LED patterned sapphire substrate 20 mA 100 mA, respectively. Also, there was no distinct degradation electrical characteristics
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