Direct deposition of nickel silicide nanowire
作者： Bencherki Mebarki , Ludovic Godet , Paul F. Ma , Annamalai Lakshmanan , Mehul B. Naik
DOI:
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摘要: Methods for direct deposition of a metal silicide nanowire back-end interconnection structures semiconductor applications are provided. In one embodiment, the method includes positioning substrate in processing region process chamber, having first surface comprising non-dielectric material; and dielectric layer formed on surface. An opening is layer, exposing at least portion surface, sidewalls. A seed deposited using PVD process, wherein performed with either no bias or which creates sidewall less than 1% then selectively metal-silicon organic precursor, creating nanowire.
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