作者: John Jianshi Wang , Hao Fang
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摘要: A semiconductor device having multiple layers uses different size contacts at layer in order to simplify the manufacturing process and depth of etching required. Contact sizes are selected based on responsiveness material process. Where a deep etch is required, larger contact used. shallower through similar smaller slow As result, etches can complete about same time. The technique be employed any number contacts. An intermediate used where etched results slower plurality depending depths required characteristics etched, so that for all completes substantially