Method for fabricating contact electrode of the semiconductor device
作者： Soon-Kyou Jang
DOI:
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摘要: According to the present invention, a contact hole is formed by using formation mask until portions of first and second impurity areas are respectively exposed, so that holes formed. The size over area (P-type impurity) relatively larger than (N-type impurity). As result, an N-type decreases P-type increase corresponding degree, thereby reducing resistance generated on without increasing chip size.
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