Method of making flexible interconnections with dual-metal-dual-stud structure

摘要: A metal interconnect having a high conductivity and resistance to migration failure is formed of two layers or alloy (such as TI/CuAlSi) with dielectric interposed therebetween connection made between the by conductive material, preferably in form plug stud an aperture inter-level dielectric, at ends interconnect. precision metal-to-metal capacitor can be from same forming separate connections each layers. The topography (and capacitor) reduced severity facilitates planarization overlying dielectric.