Method for forming inlaid interconnects in a semiconductor device
作者： Jeffrey L. Klein , Robert W. Fiordalice , Papu D. Maniar
DOI:
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摘要: In the present invention, an inlaid interconnect (44) is formed by chemical mechanical polishing. A polish assisting layer (31), in form of aluminum nitride layer, between interlayer dielectric (30) and metal (42) to prevent dishing or cusping upon By allowing sacrificial (31) be removed at close same rate as during final stages polishing, avoided. The also facilitates vapor deposition providing a more suitable nucleation site for than exists with silicon dioxide.
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