Method of forming an integrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layer

摘要: A interconnect structure is provided having a conductor with enhanced thickness. The includes an upper portion and lower portion, wherein the geometry sufficient to increase current-carrying capacity beyond that by portion. formed filling trench within dielectric region, selectively removing conductive material from surface except for regions directly above portions thereby form of cross-section which can be produced modifying via-etch mask, rather than reconfigure and/or move features metal mask.