Methods of forming an interconnect on a semiconductor substrate

摘要: A device and methods of forming an interconnection within a prepatterned channel in semiconductor are described. The present invention includes method interconnect device. first dielectric layer is deposited over substrate patterned to form contact opening that subsequently filled with plug. second the channel, wherein acts as etch stop prevent etching substrate. also interconnect. chapel. metal channel. polished alkaline solution remove does not lie chapel further silicon nitride layer. conductive material. on plug such all lies part