Electromigration improvements with titanium underlay and overlay in Al(Cu) metallurgy
作者： J.J. Estabil , H.S. Rathore , E.N. Levine
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摘要: The reliability advantages of Ti-Al(Cu)-Ti are introduced in this work. Outstanding tolerance to electromigration damage is measured both single level interconnections and two-level with tungsten via-studs. A greater than 100* improvement the median time failure (t/sub 50/) for over simple Al(Cu). An integrated, four-level metallization has been realized. >
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