Grain size dependence of electromigration‐induced failures in narrow interconnects
作者： J. Cho , C. V. Thompson
DOI: 10.1063/1.101054
关键词: Grain size 、 Extrapolation 、 Mean time between failures 、 Condensed matter physics 、 Mathematical model 、 Metallurgy 、 Laser linewidth 、 Electromigration 、 Materials science 、 Grain size dependence 、 Median time to failure
摘要: Measurements of the median time to failure (MTTF) and deviation in electromigration‐induced (DTTF) Al alloy thin‐film lines are reported. As ratio linewidth grain size decreases, MTTF decreases a minimum then increases exponentially. DTTF continuously increases. We show that serial parallel unit models can be used explain dependence for interconnects. further note extrapolation low cumulative failures based on must knowledge statistics individual units.
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