Interconnection with self-aligned via plug
作者： Gary Hong
DOI:
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摘要: A device and a method of formation on substrate semiconductor interconnection via structure for devices is provided. Initially, form first metal layer the substrate, dielectric upon layer, mask with etching pattern therein. Then, etch through to forming trenches between lines formed from covered layer. Next, stop surface planarize it, second above hole down plug in extending into contact
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