Semiconductor integrated circuit having a multilayer wiring structure

摘要: A semiconductor integrated circuit is constituted, by forming selectively a first insulation film on lower layer wiring metal; after covering lateral wall of the metal with second film, embedding material having low dielectric constant in so as to flatten surface thereof. third formed over entire surface, and through holes are made films connect upper holes. Thus, it possible realize very good flatness, multilayer high reliability which corrosions, etc., not caused containing hole portions, make coated thicker, have can be relatively easily formed, that capacity decreased.