An/TaN/WN/GaAs Structure Schottky Gate Formation for Self-Aligned GaAs MESFET

摘要: An Au/TaN/WN/GaAs structure Schottky gate forming process was investigated for self-aligned microwave GaAs MESFET. Multi-layers of transition metal nitride were formed by reactive rf sputtering. Good contacts obtained the system even after a high-temperature rapid infrared lamp annealing ion implantation. A MESFET developed using Au/TaN/WN multi-layers gate. The with 0.7 µm length showed noise figure 1.7 dB an associated gain 7.3 at 12 GHz.