WSix refractory gate metal process for GaAs MESFETs
作者： J. Willer , M. Heinzle , N. Arnold , D. Ristow
DOI: 10.1016/0038-1101(90)90242-7
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摘要: Abstract A co-sputtering process is characterized which allows the deposition of WSi0.4 layers for Schottky gates GaAs self-aligned MESFETs. The parameters were optimized to yield films with low stress, good adhesion and a high interface stability during 800°C n+ implant activation anneal. diffusion barrier properties metal can be attributed amorphous nature film. This implies natural explanation optimum film composition. Employing various analytical methods gate metal/GaAs was after I−V diode measurements performed obtain contact electrical such as height ideality factor. MESFETs different channel implants down 10 keV fabricated confirm contact.
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