The influence of an electric field on the mechanism of combustion synthesis of tungsten silicides
作者： S. Gedevanishvili , Z.A. Munir
关键词:
摘要: The synthesis of tungsten silicides by self-propagating combustion has been successfully accomplished under the influence an electric field. Materials with starting composition ranging from 6 to 30 wt. % Si were investigated method field-activated (FACS). A threshold field value was required initiate a self-sustaining wave; depended on composition. It shown that level applied can mechanism silicide formation. W 5 3 could be formed only at relatively high values while WSi 2 any effect formation is discussed in terms its role liquid phase
harvard.edu
springer.com
sci-hub.se 参考文章(14)
B. Bokhonov, E. Ivanov, V. Boldyrev, Nanocrystalline powder formation during mechanical alloying of W and Si Journal of Alloys and Compounds. ,vol. 199, pp. 125- 128 ,(1993) , 10.1016/0925-8388(93)90437-R
S.C. Tjong, I.C. Hsieh, TEM investigations of the tungsten silicide films on silicon Materials Research Bulletin. ,vol. 22, pp. 841- 847 ,(1987) , 10.1016/0025-5408(87)90039-0
A. Feng, Z. A. Munir, Field‐assisted self‐propagating synthesis of β‐SiC Journal of Applied Physics. ,vol. 76, pp. 1927- 1928 ,(1994) , 10.1063/1.357677
J. Willer, M. Heinzle, N. Arnold, D. Ristow, WSix refractory gate metal process for GaAs MESFETs Solid-State Electronics. ,vol. 33, pp. 571- 577 ,(1990) , 10.1016/0038-1101(90)90242-7
S. Luby, E. Majkova, E. D'Anna, A. Luches, M. Martino, A. Tufano, G. Majni, Tungsten silicide formation by multipulse excimer laser irradiation Applied Surface Science. ,vol. 69, pp. 345- 349 ,(1993) , 10.1016/0169-4332(93)90531-F
Zuhair A. Munir, Umberto Anselmi-Tamburini, Self-propagating exothermic reactions: The synthesis of high-temperature materials by combustion Materials Science Reports. ,vol. 3, pp. 277- 365 ,(1989) , 10.1016/0920-2307(89)90001-7
M. Y. Tsai, F. M. d’Heurle, C. S. Petersson, R. W. Johnson, Properties of tungsten silicide film on polycrystalline silicon Journal of Applied Physics. ,vol. 52, pp. 5350- 5355 ,(1981) , 10.1063/1.329393
F. Nava, B. Z. Weiss, K. Y. Ahn, D. A. Smith, K. N. Tu, Thermal stability and electrical conduction behavior of coevaporated WSi2±xthin films Journal of Applied Physics. ,vol. 64, pp. 354- 364 ,(1988) , 10.1063/1.341435
D H Zhu, H B Lu, K Tao, B X Liu, A preliminary study of the formation of WSi2 by high-current W ion implantation Journal of Physics: Condensed Matter. ,vol. 5, pp. 5505- 5512 ,(1993) , 10.1088/0953-8984/5/31/014
M. Hammar, S.-L. Zhang, R. Buchta, T. Johansson, Investigation of chemically vapour deposited tungsten and tungsten silicide as contacts to n+ and p+ silicon areas Thin Solid Films. ,vol. 185, pp. 9- 19 ,(1990) , 10.1016/0040-6090(90)90003-V