Investigation of chemically vapour deposited tungsten and tungsten silicide as contacts to n+ and p+ silicon areas
作者： M. Hammar , S.-L. Zhang , R. Buchta , T. Johansson
DOI: 10.1016/0040-6090(90)90003-V
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摘要: Abstract Tungsten and WSi2 have been examined as contact barriers between aluminium n+ - or p+ -Si. The specific resistivity diode leakage current were evaluated after heat treatment at different temperatures. Rutherford backscattering spectrometry measurements, X-ray diffraction analysis, scanning electron microscopy sheet resistance measurements performed to study the thermal stabilities of Al/W/Si Al/WSi2/Si systems. resistivities chemically vapour deposited tungsten -Si with a surface concentration 7.5 × 1019 cm-3 8 10-7 Ωcm2 9 respectively. To 2.6 cm-3, they 5 10-6 1 Ωcm2. Diffusion was revealed occur above 475°C in case WSi2. void formation silicon substrates observed 500°C for system. increase structures is related onset Si-Al interpenetration. Alloy contacts whereas W-Al other alloys not detected up 600°C contact.
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sci-hub.se 参考文章(16)
Chung Yu Ting, Marc Wittmer, Investigation of the Al/TiSi2/Si contact system Journal of Applied Physics. ,vol. 54, pp. 937- 943 ,(1983) , 10.1063/1.332018
R. A. Levy, M. L. Green, Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications Journal of The Electrochemical Society. ,vol. 134, ,(1987) , 10.1149/1.2100464
S. Swirhun, K.C. Saraswat, R.M. Swanson, Contact resistance of LPCVD W/Al and PtSi/W/Al metallization IEEE Electron Device Letters. ,vol. 5, pp. 209- 211 ,(1984) , 10.1109/EDL.1984.25890
G. J. van Gurp, W. M. Reukers, Aluminum‐silicide reactions. II. Schottky‐barrier height Journal of Applied Physics. ,vol. 50, pp. 6923- 6926 ,(1979) , 10.1063/1.325844
R.L. Gillenwater, M.J. Hafich, G.Y. Robinson, The effect of lateral current spreading on the specific contact resistivity in D-resistor Kelvin devices IEEE Transactions on Electron Devices. ,vol. 34, pp. 537- 543 ,(1987) , 10.1109/T-ED.1987.22960
Y. Pauleau, Chemical vapour deposition of tungsten films for metallization of integrated circuits Thin Solid Films. ,vol. 122, pp. 243- 258 ,(1984) , 10.1016/0040-6090(84)90051-8
T. Hara, N. Ohtsuka, K. Sakiyama, S. Saito, Barrier effect of W-Ti interlayers in-Al ohmic contact systems IEEE Transactions on Electron Devices. ,vol. 34, pp. 593- 598 ,(1987) , 10.1109/T-ED.1987.22968
Y. Pauleau, The influence of an aluminum overlayer on the interaction of tungsten films with silicon substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 6, pp. 817- 824 ,(1988) , 10.1116/1.584347
G. J. van Gurp, J. L. C. Daams, A. van Oostrom, L. J. M. Augustus, Y. Tamminga, Aluminum‐silicide reactions. I. Diffusion, compound formation, and microstructure Journal of Applied Physics. ,vol. 50, pp. 6915- 6922 ,(1979) , 10.1063/1.325843
J. O. Olowolafe, C. J. Palmstro/m, E. G. Colgan, J. W. Mayer, Al/TiW reaction kinetics: Influence of Cu and interface oxides Journal of Applied Physics. ,vol. 58, pp. 3440- 3443 ,(1985) , 10.1063/1.335764