Aluminum‐silicide reactions. I. Diffusion, compound formation, and microstructure
作者： G. J. van Gurp , J. L. C. Daams , A. van Oostrom , L. J. M. Augustus , Y. Tamminga
DOI: 10.1063/1.325843
关键词: Intermetallic 、 Electron microprobe 、 Analytical chemistry 、 Rutherford scattering 、 Auger electron spectroscopy 、 Microstructure 、 Silicide 、 Materials science 、 Diffusion barrier 、 Transmission electron microscopy
摘要: … ed by Hosack' in the Al/PtSi reaction. NiAl3 was also detected in Al/NiSi reactions. Ho and co-workers5 also found ternary compounds in Al/Pd2 Si reactions. In the systems studied here …
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sci-hub.se 参考文章(19)
L. K. Walford, The structure of the intermetallic phases MoAl12, ReAl12 and TcAl12 Acta Crystallographica. ,vol. 17, pp. 57- 59 ,(1964) , 10.1107/S0365110X64000123
L. F. Mondolfo, Aluminum Alloys: Structure and Properties ,(1976)
E. Hökelek, G.Y. Robinson, Aluminum/nickel silicide contacts on silicon Thin Solid Films. ,vol. 53, pp. 135- 140 ,(1978) , 10.1016/0040-6090(78)90026-3
A. K. Sinha, Mildred H. Read, T. E. Smith, Silicide Formation in Tungsten and Other Refractory Metalizations on PtSi on Silicon Journal of The Electrochemical Society. ,vol. 120, pp. 1775- 1778 ,(1973) , 10.1149/1.2403362
J. M. Poate, K. N. Tu, J. W. Mayor, Archibald L. Fripp, Thin Films—Interdiffusion and Reactions Journal of The Electrochemical Society. ,vol. 126, ,(1979) , 10.1149/1.2129351
G. J. van Gurp, W. M. Reukers, Aluminum‐silicide reactions. II. Schottky‐barrier height Journal of Applied Physics. ,vol. 50, pp. 6923- 6926 ,(1979) , 10.1063/1.325844
R. Pretorius, Z. L. Liau, S. S. Lau, M‐A. Nicolet, Dissociation mechanism for solid‐phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) system Applied Physics Letters. ,vol. 29, pp. 598- 600 ,(1976) , 10.1063/1.89156
J. T. Grant, M. P. Hooker, R. W. Springer, T. W. Haas, Comparison of Auger spectra of Mg, Al, and Si excited by low−energy electron and low−energy argon−ion bombardment Journal of Vacuum Science and Technology. ,vol. 12, pp. 481- 484 ,(1975) , 10.1116/1.568568
G. J. van Gurp, Diffusion‐limited Si precipitation in evaporated Al/Si films Journal of Applied Physics. ,vol. 44, pp. 2040- 2050 ,(1973) , 10.1063/1.1662511
H. Grinolds, G. Y. Robinson, Study of Al/Pd2Si contacts on Si Journal of Vacuum Science and Technology. ,vol. 14, pp. 75- 78 ,(1977) , 10.1116/1.569177