Thermal stability of the Al/PdxW100−x/Si contact systems
作者： M. Eizenberg , R. D. Thompson , K. N. Tu
DOI: 10.1063/1.335992
关键词:
摘要: Interactions of thin films Al and Pd‐W alloys (Pd80W20 Pd20W80) deposited on Si SiO2 have been studied using Auger‐electron spectroscopy, Rutherford backscattering spectrometry, x‐ray diffraction, forward current‐voltage measurements Schottky‐barrier height. For the bilayer inert substrate SiO2, Pd reacts with Al, forming Al‐rich Al‐Pd intermetallic compounds at 400 °C. Furthermore, in Pd‐rich (Pd80W20) permeates through whole alloy film readily 500 °C, while W‐rich Pd20W80 integrity is preserved even following annealing 600 °C. single‐crystal Si, results show extraction to both sides alloy, Pd2Si side side. In case (Al/Pd80W20/Si) contact deterioration due penetration interface observed 500 °C possibly case...
scitation.org
aip.org
sci-hub.se 参考文章(18)
David W. Levinson, Treatise on materials science and technology, Vol. 24, preparation and properties of thin films: edited by K. N. Tu and R. Rosenberg; published by Academic Press, New York, 1982; 338 pp.; price, U.S. $48.00 Materials Science and Engineering. ,vol. 67, pp. 255- ,(1984) , 10.1016/0025-5416(84)90057-0
K. N. Tu, R. Rosenberg, Preparation and properties of thin films Academic Press. ,(1982)
U Köster, PS Ho, JE Lewis, None, Material reactions in Al/Pd2Si/Si junctions. I. Phase stability Journal of Applied Physics. ,vol. 53, pp. 7436- 7444 ,(1982) , 10.1063/1.330113
K. N. Tu, W. N. Hammer, J. O. Olowolafe, Shallow silicide contact Journal of Applied Physics. ,vol. 51, pp. 1663- 1668 ,(1980) , 10.1063/1.327773
J. M. Poate, K. N. Tu, J. W. Mayor, Archibald L. Fripp, Thin Films—Interdiffusion and Reactions Journal of The Electrochemical Society. ,vol. 126, ,(1979) , 10.1149/1.2129351
K. N. Tu, Shallow and parallel silicide contacts Journal of Vacuum Science and Technology. ,vol. 19, pp. 766- 777 ,(1981) , 10.1116/1.571147
H. Norde, A modified forward I‐V plot for Schottky diodes with high series resistance Journal of Applied Physics. ,vol. 50, pp. 5052- 5053 ,(1979) , 10.1063/1.325607
H. Grinolds, G. Y. Robinson, Study of Al/Pd2Si contacts on Si Journal of Vacuum Science and Technology. ,vol. 14, pp. 75- 78 ,(1977) , 10.1116/1.569177
J. O. Olowolafe, K. N. Tu, J. Angilello, Contact reaction between Si and Pd‐W alloy films Journal of Applied Physics. ,vol. 50, pp. 6316- 6320 ,(1979) , 10.1063/1.325772
G. J. van Gurp, J. L. C. Daams, A. van Oostrom, L. J. M. Augustus, Y. Tamminga, Aluminum‐silicide reactions. I. Diffusion, compound formation, and microstructure Journal of Applied Physics. ,vol. 50, pp. 6915- 6922 ,(1979) , 10.1063/1.325843