The effect of lateral current spreading on the specific contact resistivity in D-resistor Kelvin devices
作者： R.L. Gillenwater , M.J. Hafich , G.Y. Robinson
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摘要: The effects of lateral current spreading on the determination ohmic contact resistivity when Using Kelvin devices with a D-resistor layout are studied by numerical simulation and experimental measurements. Simulations show that extracted can be higher or lower than actual resistivity. is found to strong function geometrical layout, semiconductor sheet resistance, Futhermore, it shown cannot determined below some minimum value effect misalignment during processing produce significant errors. Good agreement experiment for As-implanted contacts Si. Guidelines design, processing, evaluation presented.
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