Contact resistivity of shallow junctions formed by implantation through Pt or PtSi
作者： Bing-Yue Tsui , Mao-Chieh Chen
DOI: 10.1016/0038-1101(92)90152-3
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摘要: Abstract The specific contact resistance (ϱc) of PtSi/p+ and PtSi/n+ contacts formed by ion implantation through Pt or PtSi was studied. A simple process to form self-aligned six-terminal Kelvin structure developed in order measure the resistance. For system, a ϱc lower than 1 × 10−6 ω-cm2 achieved BF2+ at 40 keV dose 5 1015 cm−2. Increase energy could further decrease ρc be 10−7 ω-cm2. system that obtained. These results indicate although PtSi-contacted junction is temperatures 800°C, low enough satisfy requirements submicrometer technology. We suggest should favorable material shallow junctions simultaneously for future VLSI processes thermal budget requirement.
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