Rapid thermal nitridation of titanium on Cu/Si contact system

摘要: Abstract The TiN/TiSi2 bilayer formed on n+-p junction by rapid thermal annealing (RTA) process was investigated. various thicknesses of titanium film (10–80 nm) were sputtered the n+Si substrate, then annealed RTA at a temperature 850°C for 30 s in N2 ambient (850°C/30 s/N2). Junction leakage current densities diodes with bilayers about 10 nA/cm2 initial Ti thickness below 65 nm. used as diffusion barrier between Cu and n+Si. Leakage density specific contact resistance measurements performed Cu/TiN/TiSi2/n+Si system after stress temperatures (250–600°C). stability increasing found. optimum n + Si sample 50 nm 850°C/30s/N2. It possessed TiN (20 nm)/TiSi2 (100 up to 475°C system. We also displayed cross-section transmission electron microscopy glancing angle incident X-ray diffraction data sintering studied failure mechanism.