Kelvin test structure for measuring contact resistance of shallow junctions
作者： L.K. Nanver , E.J.G. Goudena , J. Slabbekoorn
DOI: 10.1109/ICMTS.1996.535654
关键词:
摘要: A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped shallow n/sup +/ p/sup junctions, which may be self-aligned to the window. The is easily integrated in many IC-processes. Results are presented high-dose arsenic implantations, where excimer laser annealing windows yields resistivities below 10/sup -7/ /spl Omega/cm/sup 2/.
sci-hub.se 参考文章(10)
Luning, Rousseau, Griffin, Carey, Plummer, Kinetics of high concentration arsenic deactivation at moderate to low temperatures international electron devices meeting. pp. 457- 460 ,(1992) , 10.1109/IEDM.1992.307400
W.M. Loh, S.E. Swirhun, T.A. Schreyer, R.M. Swanson, K.C. Saraswat, Modeling and measurement of contact resistances IEEE Transactions on Electron Devices. ,vol. 34, pp. 512- 524 ,(1987) , 10.1109/T-ED.1987.22957
Marius Orlowski, Ravi Subrahmanyan, Gary Huffman, The effect of low-thermal-budget anneals and furnace ramps on the electrical activation of arsenic Journal of Applied Physics. ,vol. 71, pp. 164- 169 ,(1992) , 10.1063/1.350731
R.L. Gillenwater, M.J. Hafich, G.Y. Robinson, The effect of lateral current spreading on the specific contact resistivity in D-resistor Kelvin devices IEEE Transactions on Electron Devices. ,vol. 34, pp. 537- 543 ,(1987) , 10.1109/T-ED.1987.22960
L.K. Nanver, E.J.G. Goudena, H.W. van Zeijl, Optimisation of base-link in fully-implanted NPNs Electronics Letters. ,vol. 29, pp. 1451- 1452 ,(1993) , 10.1049/EL:19930971
T.A. Schreyer, K.C. Saraswat, A two-dimensional analytical model of the cross-bridge Kelvin resistor IEEE Electron Device Letters. ,vol. 7, pp. 661- 663 ,(1986) , 10.1109/EDL.1986.26511
Dieter K. Schroder, Semiconductor Material and Device Characterization ,(1990)
S.J. Proctor, L.W. Linholm, J.A. Mazer, Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity IEEE Transactions on Electron Devices. ,vol. 30, pp. 1535- 1542 ,(1983) , 10.1109/T-ED.1983.21334
S.-L. Zhang, M. Ostling, H. Norstrom, T. Arnborg, On contact resistance measurement using four-terminal Kelvin structures in advanced double-polysilicon bipolar transistor processes IEEE Transactions on Electron Devices. ,vol. 41, pp. 1414- 1420 ,(1994) , 10.1109/16.297737
M. Norishima, H. Iwai, Y. Niitsu, K. Maeguchi, Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5- mu m Bi-CMOS process IEEE Transactions on Electron Devices. ,vol. 39, pp. 33- 40 ,(1992) , 10.1109/16.108209