Magnetoelastic coupling in multilayered ferroelectric/ferromagnetic thin films: A quantitative evaluation
作者： A. Chiolerio , M. Quaglio , A. Lamberti , F. Celegato , D. Balma
DOI: 10.1016/J.APSUSC.2012.04.174
关键词:
摘要: Abstract The electrical control of magnetization in a thin film, achieved by means magnetoelastic coupling between ferroelectric and ferromagnetic layer represents an attractive way to implement magnetic information storage processing within logical architectures known as Magnetic Quantum Cellular Automata (MQCA). Such systems have been addressed multiferroics. We exploited cost-effective techniques realize multi-layered multiferroic systems, such sol–gel deposition RF sputtering, introducing specific technique the crystal structure film roughness effect on domain wall motion reconfiguration, induced coupling, evaluating 2-dimensional statistical properties enhanced MFM matrices. A sputtered 50-nm-thick Co Si/SiO 2 /Si 3 N 4 /Ti/Pt/PbTiO /Pb(Zr 0.53 Ti 0.47 )O substrate was realized, exploiting two differently engineered PZT nano-crystalline structures conditions leading favorable compromise order functional devices were elucidated.
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