Effect of ion bombardment on low-temperature growth of TiO2 thin films in DC reactive sputtering with two sputtering sources

摘要: Abstract Low-temperature, high-rate deposition of photocatalytic TiO 2 films is the key to their widespread practical adoption. Although several methods are available for achieving high rates at low temperature, obtained have poor crystallinity because insufficient control over energy deposited atoms and surface migration. Here we investigated feasibility using radio-frequency (RF) bias sputtering enhance migration by precisely examining effect induced ion bombardment on grown from a crystallized seed layer. Deposition experiments were conducted DC reactive with two sources an unheated substrate RF 0–70 V. The results clearly showed that indeed encouraged crystal growth thus afforded improved properties. largest mean crystallite size was voltage ~ 50 V; film exhibited excellent hydrophilicity had contact angle less than 2.0° after 1 h UV irradiation. Further increase in above 60 V, however, led sudden degradation properties, probably significant damage caused such energies.