High rate reactive deposition of TiO2 films using two sputtering sources

摘要: Abstract We propose a new high-rate reactive sputter-deposition method with two sputtering sources for fabricating TiO2 films. One source operates in metal mode condition and supplies titanium atoms to the substrate. The other oxide works as an oxygen radical supplying radicals substrate surface promoting oxidization of atoms. Each is separated mesh grid from deposition chamber, Ar gas are introduced separately through supply sources, respectively. By using this system, rate above 80 nm/min can be obtained films rutile structure.