Improved surface plasmon enhanced photodetection at an AuGaAs schottky junction using a novel molecular beam epitaxy grown Otto coupling structure

摘要: Abstract Measurements of reflectivity and photocurrent as a function angle incidence wavelength have been made for GaAsAlAsGaAsAu Schottky structure based on an Otto coupling geometry which allows incident p-polarized radiation to couple the surface plasmon (SP) mode at AuGaAs interface. At resonance, E fields associated with SP excitation are concentrated GaAsAu interface itself, enabling strong enhancement internal photoemission across barrier. Enhancement factors order 20 achieved. A direct comparison between resonant effects exciting junction itself outer Au-air has made. simple model in device indicates that excited photocarriers created gold film very short scattering length ϐ ≈ 10 nm, emphasizes importance