Quantum efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations
DOI: 10.1016/S0038-1101(01)00283-0
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摘要: Abstract The overall quantum efficiency in surface plasmon (SP) enhanced Schottky barrier photodetectors is examined by considering both the external and internal yield. yield considered through calculations of absorption transmission light a configuration that allows reflectance minimization due to SP excitation. Following Monte Carlo method, procedure presented estimate while taking into account effect elastic inelastic scattering processes on excited carriers subsequent photon absorption. relative importance photoemission band-to-band contributions highlighted along with variation as function wavelength, metal thickness other salient parameters detector.
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