Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers

摘要: Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence a spatially distributed barrier potential. In 1-4 m wavelength range it is found that spatial inhomogeneity has no significant effect on overall device photoresponse. However, above and particularly as cut-off (m) approached, these reveal difference between homogeneous inhomogeneous photoresponse which becomes increasingly exceeds 50% at m. It is, fact, displays an increased photoyield, feature confirmed by approximate analytical assuming symmetric Gaussian distribution barrier. Furthermore, importance silicide layer thickness optimizing efficiency underlined trade-off maximizing light absorption internal yield. The results presented here address important features determine photoyield PtSi/Si Schottky diodes energies below Si edge just height particular.