Effect of temperature and inhomogeneity on the yield of PtSi n Si photodetectors

摘要: Abstract The temperature dependence of the current-voltage characteristics a PtSi/Si Schottky detector is investigated between 20 and 300 K, range that much wider than what usually reported in literature. data satisfactorily interpreted on basis thermionic emission mechanism across an inhomogeneous barrier. barrier inhomogeneities are shown to obey single Gaussian distribution with mean height 0.76 eV standard deviation 30 meV at zero bias. calculated detector's efficiency, while taking into account, shows increase decreasing can be considered overall as marginal but becomes more significant below 60 K wavelengths near cut-off edge.