作者: Ali Akbari , Pierre Berini
DOI: 10.1063/1.3171937
关键词:
摘要: A silicon-based Schottky contact photodetector integrated into a finite width asymmetric metal stripe supporting short-range surface plasmon polaritons is presented. Input optical energy coupled bound mode supported by the stripe, leading to total absorption of in-coupled energy. The absorbed excites carriers in some which cross barrier (internal photoemission) photocurrent under reverse bias. Significant enhancement quantum efficiency observed for thin due multiple internal reflections excited carriers. device holds promise short-reach high-speed interconnects and photonic circuitry.