Vertical FET devices including a contact on protruding portions of a substrate
作者： Park Yong Hee , Seo Kang Ill , Jung Young Chai , Kim Seon Bae , Kang Myung Gil
DOI:
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摘要: VFET devices are provided. A device includes a substrate including first and second protruding portions. The an isolation region between the silicide regions on portions, respectively. Moreover, contact regions. Related methods of forming also
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