Semiconductor memory device with fin
作者： Takeshi Kajiyama
DOI:
关键词:
摘要: According to one embodiment, a semiconductor memory device includes fin-shaped active area, gate electrode, silicide layer, and contact. The area is provided in substrate has first side, second side parallel the top face connecting sides. electrode formed trench such that it crosses part of word line insulated from area. layer located on either at least serving as source drain region. contact connected connects storage element.
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