Avalanche photodiode having guard ring and method of manufacturing the same

摘要: For providing an avalanche photodiode having a good guard ring effect and high speed response, semiconductor body is prepared, which includes window layer (26) of n-type InP epitaxially grown on multiplication (25) n⁺-type InP. The selectively removed so as to expose the layer, thereby recessed portion (36). After p-type impurity introduced into form (28) therein, both exposed provide PN junction (35) therein.