Photodetector and opto-electronic integrated circuit
作者： Goro Sasaki
DOI:
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摘要: A photodetector of the present invention is devised to reduce dark current by employing a novel guard ring structure suitable for mesa type photodiode (PD). Namely, PD has in which p-type or n-type semiconductor region be light receiving area surrounded (guard ring) same conduction type. electrode formed on and kept at potential as an desired current. Also, opto-electronic integrated circuit such that PD, invention, element transistor are common substrate anode cathode conductively connected gate field-effect base bipolar transistor.
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