Method of fabricating a surface coupled InGaAs photodetector

摘要: A photodetector is fabricated in a multilayer structure having semi-insulating InP substrate, an n+ contact layer overlying the undoped InGaAs absorbing layer, and p+ doped layer. gold-beryllium p-contact dot deposited onto of structure. mesa etched with citric acid-based etchant into The includes metal dot, patterned, passive metallic n-contact patterned polyimide insulator portion so that does not cover organic polymer cured device passivated by heating it nitrogen atmosphere. Thick gold contract traces are deposited, one trace extending to other