Method of processing an epitaxial wafer of InP or the like
作者： Takashi Iwasaki
DOI:
关键词: Optoelectronics 、 Light-emitting diode 、 Wafer 、 Materials science 、 Laser 、 Epitaxy 、 Diode 、 Photodiode
摘要: Fine processing of InP epitaxial wafers including As, In and P for producing laser diodes, light emitting diodes or photodiodes. The wafer is selectively covered with striped protection mask films. etched by some etchant which forms normal-mesas mountain-shaped stripes under the masks. Then again a gas thermally dissolved AsCl 3 till have rectangle sections erect surfaces. Buried layers are grown on eliminated parts wafer.
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