Chemical Etching Characteristics of ( 001 ) InP

摘要: The chemical etching characteristics of are studied through an mask in the solutions various systems: (i) , (ii) (iii) (iv) and (v) . etched depth is evaluated by using a calibrated optical microscope. profiles examined cleaving wafer orthogonal directions along (110) (10) planes. Various profiles, such as V‐shaped, reverse mesashaped ones, nearly vertical walls, formed stripes being on (001) indexes etch‐revealed planes identified making comparison with calculated angle between surface etch‐side plane. utility these also discussed for variety device applications.