In situ selective-area etching and MOVPE regrowth of GaInAs-InP on InP substrates
作者： B Henie , R Rudeloff , H Bolay , F Scholz
DOI: 10.1088/0268-1242/8/6/005
关键词:
摘要: The authors present a method for selective in situ etching and regrowth open stripes SiO2-covered InP substrates inside MOVPE reactor. medium was PCl2 which dissociated the reactor at temperatures between 400 degrees C 630 C. They investigated shape of grooves etched with respect to temperature crystallographic orientation by optical microscopy scanning electron (SEM). First experiments on regrown V have been done.
harvard.edu
sci-hub.se 参考文章(9)
Kangsa Pak, Yasuo Koide, Kimimasa Imai, Akira Yoshida, Tetsuro Nakamura, Yukio Yasuda, Tatau Nishinaga, Vapor‐Phase Etching of InP Using Anhydrous HCl and PH 3 Gas Journal of The Electrochemical Society. ,vol. 133, pp. 2204- 2205 ,(1986) , 10.1149/1.2108370
Hoi-Jun Yoo, Young-Se Kwon, Vertical Integration of GaAs/AlGaAs Laser Diode and Vertical JFET Japanese Journal of Applied Physics. ,vol. 27, pp. L431- L433 ,(1988) , 10.1143/JJAP.27.L431
C. Caneau, R. Bhat, M. Koza, J.R. Hayes, R. Esagui, Etching of InP by HCl in an OMVPE reactor Journal of Crystal Growth. ,vol. 107, pp. 203- 208 ,(1991) , 10.1016/0022-0248(91)90457-G
Y. D. Galeuchet, P. Roentgen, V. Graf, GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures Journal of Applied Physics. ,vol. 68, pp. 560- 568 ,(1990) , 10.1063/1.346829
B. I. Miller, A. Shahar, U. Koren, P. J. Corvini, Quantum wires in InGaAs/InP fabricated by holographic photolithography Applied Physics Letters. ,vol. 54, pp. 188- 190 ,(1989) , 10.1063/1.101222
E. Kapon, D. M. Hwang, R. Bhat, Stimulated emission in semiconductor quantum wire heterostructures. Physical Review Letters. ,vol. 63, pp. 430- 433 ,(1989) , 10.1103/PHYSREVLETT.63.430
E. Kapon, S. Simhony, R. Bhat, D. M. Hwang, Single quantum wire semiconductor lasers Applied Physics Letters. ,vol. 55, pp. 2715- 2717 ,(1989) , 10.1063/1.101934
K. Streubel, V. Härle, F. Scholz, M. Bode, M. Grundmann, Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy Journal of Applied Physics. ,vol. 71, pp. 3300- 3306 ,(1992) , 10.1063/1.350949
J. B. D. Soole, H. Schumacher, H. P. LeBlanc, R. Bhat, M. A. Koza, Butt‐coupled InGaAs metal‐semiconductor‐metal waveguide photodetector formed by selective area regrowth Applied Physics Letters. ,vol. 56, pp. 1518- 1520 ,(1990) , 10.1063/1.103161