Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy
作者： K. Streubel , V. Härle , F. Scholz , M. Bode , M. Grundmann
DOI: 10.1063/1.350949
关键词:
摘要: … If quantum wells were grown without GRIs after InP, we still observe a monolayer splitting. Contrary to that, the line splitting disappears if no GRI is used after the growth of GaInAs. This …
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(20)
R Köhrbrück, S Munnix, D Bimberg, DE Mars, JN Miller, None, Inequivalence of normal and inverted interfaces of molecular-beam epitaxy grown AlGaAs/GaAs quantum wells Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 8, pp. 798- 804 ,(1990) , 10.1116/1.584969
A. Ourmazd, D. W. Taylor, J. Cunningham, C. W. Tu, Chemical mapping of semiconductor interfaces at near atomic resolution. Physical Review Letters. ,vol. 62, pp. 933- 936 ,(1989) , 10.1103/PHYSREVLETT.62.933
Yuji Ando, Tomohiro Itoh, Calculation of transmission tunneling current across arbitrary potential barriers Journal of Applied Physics. ,vol. 61, pp. 1497- 1502 ,(1987) , 10.1063/1.338082
Jasprit Singh, K. K. Bajaj, S. Chaudhuri, Theory of photoluminescence line shape due to interfacial quality in quantum well structures Applied Physics Letters. ,vol. 44, pp. 805- 807 ,(1984) , 10.1063/1.94892
G. Laube, U. Kohler, J. Weidlein, F. Scholz, K. Streubel, R.J. Dieter, N. Karl, M. Gerdon, Me3In preparation and zone refining of adducts for high quality InP and GaInAs MOVPE Journal of Crystal Growth. ,vol. 93, pp. 45- 51 ,(1988) , 10.1016/0022-0248(88)90504-0
M. Tanaka, H. Sakaki, Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE Journal of Crystal Growth. ,vol. 81, pp. 153- 158 ,(1987) , 10.1016/0022-0248(87)90383-6
J. Christen, M. Grundmann, D. Bimberg, Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of semiconductor heterointerfaces Applied Surface Science. ,vol. 41, pp. 329- 336 ,(1990) , 10.1016/0169-4332(89)90080-9
Detlev Grützmacher, Growth and analysis of quantum well structures Journal of Crystal Growth. ,vol. 107, pp. 520- 530 ,(1991) , 10.1016/0022-0248(91)90515-7
B. Deveaud, B. Guenais, A. Poudoulec, A. Regreny, C. d’Anterroches, COMMENT ON CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION Physical Review Letters. ,vol. 65, pp. 2317- 2317 ,(1990) , 10.1103/PHYSREVLETT.65.2317
A. Ourmazd, J. Cunningham, Ourmazd and Cunningham reply. Physical Review Letters. ,vol. 65, pp. 2318- 2318 ,(1990) , 10.1103/PHYSREVLETT.65.2318