Ourmazd and Cunningham reply.

作者: A. Ourmazd , J. Cunningham

DOI: 10.1103/PHYSREVLETT.65.2318

关键词:

摘要:

参考文章(7)
B. Deveaud, A. Regreny, J‐Y. Emery, A. Chomette, Photoluminescence study of interface defects in high‐quality GaAs‐GaAlAs superlattices Journal of Applied Physics. ,vol. 59, pp. 1633- 1640 ,(1986) , 10.1063/1.336476
C. A. Warwick, W. Y. Jan, A. Ourmazd, T. D. Harris, Does luminescence show semiconductor interfaces to be atomically smooth Applied Physics Letters. ,vol. 56, pp. 2666- 2668 ,(1990) , 10.1063/1.102825
A. Ourmazd, D. W. Taylor, J. Cunningham, C. W. Tu, Chemical mapping of semiconductor interfaces at near atomic resolution. Physical Review Letters. ,vol. 62, pp. 933- 936 ,(1989) , 10.1103/PHYSREVLETT.62.933
A. OURMAZD, D. W. TAYLOR, M. BODE, Y. KIM, Quantifying the information content of lattice images. Science. ,vol. 246, pp. 1571- 1577 ,(1989) , 10.1126/SCIENCE.246.4937.1571
P.M. Petroff, J. Gaines, M. Tsuchiya, R. Simes, L. Coldren, H. Kroemer, J. English, A.C. Gossard, Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structures Journal of Crystal Growth. ,vol. 95, pp. 260- 265 ,(1989) , 10.1016/0022-0248(89)90397-7
R. M. Fleming, D. B. McWhan, A. C. Gossard, W. Wiegmann, R. A. Logan, X‐ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)mmultilayers Journal of Applied Physics. ,vol. 51, pp. 357- 363 ,(1980) , 10.1063/1.327310
J. M. Vandenberg, R. A. Hamm, M. B. Panish, H. Temkin, High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy Journal of Applied Physics. ,vol. 62, pp. 1278- 1283 ,(1987) , 10.1063/1.339681