In situ selective area etching and MOVPE regrowth of GaInAs-InP on InP substrates

摘要: The authors present a method for selective in situ etching and regrowth open stripes SiO/sub 2/ covered InP-substrates inside MOVPE (metal-organic vapor-phase epitaxy) reactor. medium was PCl/sub 3/, which dissociated the reactor at temperatures between 350 580 degrees C. technique used provides smooth homogeneous surface morphology exactly controllable rates down to few nanometer. This enables integration, of an step one process without transferring wafer from machine another, thus avoiding contamination well-prepared just before epitaxial step. At certain V-grooves can be obtained regrown with InP/GaInAs heterostructure; this is very promising possibility growing quantum wires. investigated etched substrates respect temperature crystallographic orientation by optical microscopy scanning electron microscopy. First experiments on have been done. >