Ultraviolet induced metal‐organic chemical vapor deposition growth of GaAs

摘要: Ultraviolet stimulated growth of GaAs from AsH3 and Ga(CH3)3 or Ga(C2H5)3 was studied using 254 nm irradiation, which dissociates all three reactants. Growth the ethyl compound takes place at a temperature ∼150° lower than that methyl compound, indicating important role alkyl in rate‐determining step. The temperatures UV irradiation affects rate show similar difference. radiation effects on morphology are more pronounced for investigated (783–923, 653 K, respectively). Some implications data kinetics process discussed.