Theory of photoluminescence line shape due to interfacial quality in quantum well structures

作者: Jasprit Singh , K. K. Bajaj , S. Chaudhuri

DOI: 10.1063/1.94892

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摘要: … We make use of Lifshitz theory of disordered alloys to determine the probability of distribution of … to be important in controlling the linewidths in quantum wells. The use of this quantitative …

参考文章(7)
C. Weisbuch, R. Dingle, P. M. Petroff, A. C. Gossard, W. Wiegmann, Dependence of the structural and optical properties of GaAs‐Ga1−xAlxAs multiquantum‐well structures on growth temperature Applied Physics Letters. ,vol. 38, pp. 840- 842 ,(1981) , 10.1063/1.92212
KL Chopra, RC Kainthla, DK Pandya, AP Thakoor, Physics of Thin Films Journal of The Electrochemical Society. ,vol. 111, pp. 85C- ,(1964) , 10.1149/1.2426128
I.M. Lifshitz, The energy spectrum of disordered systems Advances in Physics. ,vol. 13, pp. 483- 536 ,(1964) , 10.1080/00018736400101061
R. Dingle, H. L. Störmer, A. C. Gossard, W. Wiegmann, Electron mobilities in modulation‐doped semiconductor heterojunction superlattices Applied Physics Letters. ,vol. 33, pp. 665- 667 ,(1978) , 10.1063/1.90457
Ronald L. Greene, K.K. Bajaj, Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structures Solid State Communications. ,vol. 45, pp. 831- 835 ,(1983) , 10.1016/0038-1098(83)90810-4