Corrosion method for gradual change buffer layer of multi-junction solar battery

作者: Gao Peng , Zhang Qiming , Wang Ligong , Li Hui , Wang Shuai

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摘要: The invention relates to a corrosion method for gradual change buffer layer of multi-junction solar battery and belongs the technical field semiconductor material. is characterized in that process includes growing 0.8 1.2 [mu]m GaAs layer, 180 220 nm GaInP blocking 1400 1800 AlGaInAs on gallium arsenide substrate; protecting an epitaxial slice with photoresist exposing part be corroded measured; using chemical liquid corroding exposed part, wherein solution composed citric acid, H2O2 phosphoric acid temperature 20 25 DEG C; removing acetone after completed cleaning absolute ethyl alcohol deionized water. Then, thickness can measured. has advantages simple implementation, convenient operation, stable safety, good repeatability like not measured accurately.

参考文章(3)
Robert Y. Loo, Adele E. Schmitz, Julia J. Brown, Method of fabricating a surface coupled InGaAs photodetector ,(2000)
Jianliang Huang, Wenquan Ma, Yulian Cao, Yanhua Zhang, InAs/GaSb secondary category superlattice infrared detector ,(2012)