作者: Gao Peng , Zhang Qiming , Wang Ligong , Li Hui , Wang Shuai
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摘要: The invention relates to a corrosion method for gradual change buffer layer of multi-junction solar battery and belongs the technical field semiconductor material. is characterized in that process includes growing 0.8 1.2 [mu]m GaAs layer, 180 220 nm GaInP blocking 1400 1800 AlGaInAs on gallium arsenide substrate; protecting an epitaxial slice with photoresist exposing part be corroded measured; using chemical liquid corroding exposed part, wherein solution composed citric acid, H2O2 phosphoric acid temperature 20 25 DEG C; removing acetone after completed cleaning absolute ethyl alcohol deionized water. Then, thickness can measured. has advantages simple implementation, convenient operation, stable safety, good repeatability like not measured accurately.