Wet etching method for gallium arsenide/aluminum arsenide distributed Bragg reflector
作者： Ruoyuan Li , Zhanguo Wang , Bo Xu
DOI:
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摘要: A type of damp corrupting method gallium arsenide/aluminium arsenide distributing Prague reflector that characterized in it includes following steps: (A) on the underlay, cushion layer is generated extendedly by molecule beam extension; (B) generating several period distribution layer; (C) photoetching to form photosensitive resist pattern, light possesses width pattern; (D) eating off part cauterization solution; (E) solution and selective are alternatively used etch reflector, so required depth can be achieved precisely.
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