作者: Zadiranov Jurij Mikhajlovich , Andreev Vjacheslav Mikhajlovich , Grebenshchikova Elena Aleksandrovna , Kalinovskij Vitalij Stanislavovich , Malevskaja Aleksandra Vjacheslavovna
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摘要: FIELD: electrical engineering.SUBSTANCE: method for manufacturing nanoheterostructure chips grown on a germanium substrate includes application of ohmic contact onto the reverse and frontal surfaces nanoheterostructure, partial removal layer by way chemical etching, an antireflective coating fontal surface side passivisation with dielectric. The structure division into is performed etching through photoresist mask to depth 10-30 mcm in medium containing bromine hydride, hydrogen peroxide water at specified components.EFFECT: creation isolation channels monolith nanoheterostructures that smooth free projections pockets means single process same using liquid which ensures quality protective coatings individual elements results increased yield serviceable products their reliability enhancement as well extension service life.2 cl, 6 dwg, 2 ex