Semiconductor light receiving element
作者： Yutaka Hamamura , Kazuyuki Tadatomo , Youichiro Ohuchi , Hiroaki Okagawa , Masahiro Koto
DOI:
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摘要: A semiconductor light receiving element having a layer (1) formed from GaN group semiconductor, and an electrode (2) on one surface of the as (1 a) in such way that (L) can enter is provided. When Schottky barrier type, aforementioned contains at least electrode, which that, a), total length boundary lines between areas covered with exposed longer than outer periphery a). In addition, when photoconductive first conductivity type i layer, ohmic polarity, other polarity directly or via low resistance (1).
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