Avalanche photodiode and manufacturing method thereof
作者： Zhong Xing , Hu Yan , Yue Aiwen
DOI:
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摘要: The invention relates to the technical field of photovoltaics, and provides an avalanche photodiode a manufacturing method thereof. comprises I-type light absorbing layer, cap layer P-type contact layer. First channels are arranged on both sides p-type semiconductor region. Second which engaged with first multiplication electric control A third channel is second N-type Each wider than each channel. Compared prior art, provided by has advantages that three-stepped design used in existing photodiode; engagement problem sidewall N metal easily appears, caused too deep channels, can be improved; processing yield improved.
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