Normal-state c -axis transport in Bi 2 Sr 2 CaCu 2 O 8 + δ : Interlayer tunneling and thermally activated dissipation

摘要: We systematically investigate the effect of doping on temperature dependence c-axis resistivity in ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{CaCu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}.$ present simultaneous measurements tensor components ${\ensuremath{\rho}}_{c}$ and ${\ensuremath{\rho}}_{\mathrm{ab}}$ at different from underdoped to overdoped regime. The behaviors as a function are interpreted, normal state $(Tg{T}^{*}),$ through single phenomenological model based existence two energy barriers with heights widths. Two complementary processes considered for each barrier: incoherent tunneling thermal activation. resistive well fitted small number free parameters defined physical meanings. analysis fitting gives support consistency two-barrier model.