Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu 1 − x Fe x O 3 − δ Thin Films

摘要: Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied influence oxygen magnetoresistance (MR) SrRu1 − x Fe x O3 - δ epitaxial thin films (x = 0.10, 0.20, 0.30). For this purpose, synthesized highly strained O3 − δ with atomically flat surfaces containing different amounts using pulsed laser deposition. Without an applied magnetic field, x = 0.10 0.20 showed metal–insulator transition, while x = 0.30 film insulating behavior over entire temperature range 2–300 K. Both Fe doping concentration had large effects negative MR contributions. low case x = 0.10, in which both exhibited metallic behavior, was more prominent fewer or equivalently film. semiconducting films, higher observed for having vacancies. A relatively (~36.4%) high (δ = 0.12). The obtained results were compared studies polycrystal (Sr1 − x La )(Ru1 − x )O3. These highlight crucial role stoichiometry determining magneto-transport films.